Invention Grant
US09214343B2 ZNSNO3/ZNO nanowire having core-shell structure, method of forming ZNSNO3/ZNO nanowire and nanogenerator including ZNSNO3/ZNO nanowire, and method of forming ZNSNO3 nanowire and nanogenerator including ZNSNO3 nanowire
有权
具有核 - 壳结构的ZNSNO3 / ZNO纳米线，形成ZNSNO3 / ZNO纳米线的方法和ZNSNO3 / ZNO纳米线的纳米发生器，以及形成ZNSNO3纳米线和包含ZNSNO3纳米线的纳米发生器的方法
- Patent Title: ZNSNO3/ZNO nanowire having core-shell structure, method of forming ZNSNO3/ZNO nanowire and nanogenerator including ZNSNO3/ZNO nanowire, and method of forming ZNSNO3 nanowire and nanogenerator including ZNSNO3 nanowire
- Patent Title (中): 具有核 - 壳结构的ZNSNO3 / ZNO纳米线，形成ZNSNO3 / ZNO纳米线的方法和ZNSNO3 / ZNO纳米线的纳米发生器，以及形成ZNSNO3纳米线和包含ZNSNO3纳米线的纳米发生器的方法
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Application No.: US13489200Application Date: 2012-06-05
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Publication No.: US09214343B2Publication Date: 2015-12-15
- Inventor: Jung-inn Sohn , Seung-Nam Cha , Sung-min Kim , Sang-woo Kim
- Applicant: Jung-inn Sohn , Seung-Nam Cha , Sung-min Kim , Sang-woo Kim
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2011-0078747 20110808
- Main IPC: H01L41/08
- IPC: H01L41/08 ; H01L21/02 ; H01L41/113 ; H01L41/18 ; H01L29/06
Abstract:
A ZnSnO3/ZnO nanowire, a method of forming a ZnSnO3/ZnO nanowire, a nanogenerator including a ZnSnO3/ZnO nanowire, a method of forming a ZnSnO3 nanowire, and a nanogenerator including a ZnSnO3 nanowire are provided. The ZnSnO3/ZnO nanowire includes a core and a shell that surrounds the core, wherein the core includes ZnSnO3 and the shell includes ZnO.
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