Invention Grant
US09214355B2 Molecular radical etch chemistry for increased throughput in pulsed plasma applications
有权
用于提高脉冲等离子体应用中的通量的分子自由基蚀刻化学
- Patent Title: Molecular radical etch chemistry for increased throughput in pulsed plasma applications
- Patent Title (中): 用于提高脉冲等离子体应用中的通量的分子自由基蚀刻化学
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Application No.: US14520432Application Date: 2014-10-22
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Publication No.: US09214355B2Publication Date: 2015-12-15
- Inventor: Sebastian U. Engelmann , Nathan P. Marchack , Masahiro Nakamura
- Applicant: International Business Machines Corporation , Zeon Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Fusheng Xu
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/3065 ; H01L21/311 ; H01L21/3213
Abstract:
As device feature size shrinks, plasma induced damage is a major concern affecting micro-electronic and nano-electronic device fabrication. Pulsed plasmas are a means of mitigating the damages. However, in conventional standard etch chemistry, the etch rate for pulsed plasmas is reduced significantly resulting in a substantially decreased throughput of tech processes. A new etch chemistry is disclosed in the present invention to increase throughput in pulsed plasma applications driven mainly by the molecular radicals.
Public/Granted literature
- US20150118854A1 MOLECULAR RADICAL ETCH CHEMISTRY FOR INCREASED THROUGHPUT IN PULSED PLASMA APPLICATIONS Public/Granted day:2015-04-30
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