Invention Grant
- Patent Title: Semiconductor device manufacturing method and electronic device manufacturing method
- Patent Title (中): 半导体器件制造方法和电子器件制造方法
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Application No.: US13749126Application Date: 2013-01-24
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Publication No.: US09214361B2Publication Date: 2015-12-15
- Inventor: Yoshikatsu Ishizuki , Shinya Sasaki , Motoaki Tani
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2012-032677 20120217
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/56 ; H01L23/00 ; H01L21/683 ; H01L23/31
Abstract:
A method of manufacturing a semiconductor device, includes: placing a semiconductor element on an adhesive layer that is placed on a support body having a first through hole; placing a part in an area that includes a portion corresponding to the first through-hole, the portion being on the adhesive layer placed on the support body; forming a substrate on the adhesive layer by forming a resin layer on the adhesive layer, on which the semiconductor element and the part have been placed, the substrate including the semiconductor element, the part, and the resin layer; and detaching the substrate from the adhesive layer by pressing the part through the first through-hole.
Public/Granted literature
- US20130217184A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD Public/Granted day:2013-08-22
Information query
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