Invention Grant
- Patent Title: Bonded structure employing metal semiconductor alloy bonding
- Patent Title (中): 使用金属半导体合金结合的结合结构
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Application No.: US13780810Application Date: 2013-02-28
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Publication No.: US09214388B2Publication Date: 2015-12-15
- Inventor: Mukta G. Farooq , Zhengwen Li , Zhijiong Luo , Huilong Zhu
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Steven Meyers
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/768 ; H01L21/20 ; H01L27/06
Abstract:
Vertical stacks of a metal portion and a semiconductor portion formed on a first substrate are brought into physical contact with vertical stacks of a metal portion and a semiconductor portion formed on a second substrate. Alternately, vertical stacks of a metal portion and a semiconductor portion formed on a first substrate are brought into physical contact with metal portions formed on a second substrate. The assembly of the first and second substrates is subjected to an anneal at a temperature that induces formation of a metal semiconductor alloy derived from the semiconductor portions and the metal portions. The first substrate and the second substrate are bonded through metal semiconductor alloy portions that adhere to the first and second substrates.
Public/Granted literature
- US20130171773A1 BONDED STRUCTURE EMPLOYING METAL SEMICONDUCTOR ALLOY BONDING Public/Granted day:2013-07-04
Information query
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