Invention Grant
US09214442B2 Power semiconductor module, method for producing a power semiconductor module, and semiconductor chip 有权
功率半导体模块,功率半导体模块的制造方法以及半导体芯片

Power semiconductor module, method for producing a power semiconductor module, and semiconductor chip
Abstract:
In a power semiconductor module, a copper-containing first soldering partner, a connection layer, and a copper-containing second soldering partner are arranged successively and fixedly connected with one another. The connection layer has a portion of intermetallic copper-tin phases of at least 90% by weight. For producing such a power semiconductor module the soldering partners and the solder arranged there between are pressed against one another with a predefined pressure and the solder is melted. After termination of a predefined period of time the diffused copper and the tin from the liquid solder form a connection layer comprising intermetallic copper-tin phases, the portion of which is at least 90% by weight of the connection layer created from the solder layer.
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