Invention Grant
US09214442B2 Power semiconductor module, method for producing a power semiconductor module, and semiconductor chip
有权
功率半导体模块,功率半导体模块的制造方法以及半导体芯片
- Patent Title: Power semiconductor module, method for producing a power semiconductor module, and semiconductor chip
- Patent Title (中): 功率半导体模块,功率半导体模块的制造方法以及半导体芯片
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Application No.: US11688050Application Date: 2007-03-19
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Publication No.: US09214442B2Publication Date: 2015-12-15
- Inventor: Karsten Guth , Holger Torwesten
- Applicant: Karsten Guth , Holger Torwesten
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L25/07

Abstract:
In a power semiconductor module, a copper-containing first soldering partner, a connection layer, and a copper-containing second soldering partner are arranged successively and fixedly connected with one another. The connection layer has a portion of intermetallic copper-tin phases of at least 90% by weight. For producing such a power semiconductor module the soldering partners and the solder arranged there between are pressed against one another with a predefined pressure and the solder is melted. After termination of a predefined period of time the diffused copper and the tin from the liquid solder form a connection layer comprising intermetallic copper-tin phases, the portion of which is at least 90% by weight of the connection layer created from the solder layer.
Public/Granted literature
- US20080230905A1 Power Semiconductor Module, Method for Producing a Power Semiconductor Module, and Semiconductor Chip Public/Granted day:2008-09-25
Information query
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