Invention Grant
US09214466B2 Method and system for split threshold voltage programmable bitcells
有权
分离阈值电压可编程位单元的方法和系统
- Patent Title: Method and system for split threshold voltage programmable bitcells
- Patent Title (中): 分离阈值电压可编程位单元的方法和系统
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Application No.: US14201362Application Date: 2014-03-07
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Publication No.: US09214466B2Publication Date: 2015-12-15
- Inventor: Jonathan Schmitt
- Applicant: Broadcom Corporation
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Brinks Gilson & Lione
- Main IPC: G11C8/12
- IPC: G11C8/12 ; H01L27/105 ; G11C17/16 ; G11C17/18 ; H01L23/525 ; H01L27/112
Abstract:
A bitcell may include an insulating region, a first doping proximate to the insulating region, and a second doping surrounding the first doping. The second doping can be characterized by a higher gate voltage breakdown than the first doping. Also, the bitcell may include a gate terminal, and the bitcell may be configured for programming by a voltage on the gate terminal that results in a conductive hole selectively burned in the insulating region between the gate terminal and the first doping.
Public/Granted literature
- US20140183656A1 Method and System for Split Threshold Voltage Programmable Bitcells Public/Granted day:2014-07-03
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