Invention Grant
- Patent Title: High voltage device having Schottky diode
- Patent Title (中): 具有肖特基二极管的高压器件
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Application No.: US14504438Application Date: 2014-10-02
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Publication No.: US09214549B2Publication Date: 2015-12-15
- Inventor: Min-Hsuan Tsai
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/06 ; H01L29/872 ; H01L29/47 ; H01L29/66 ; H01L29/06
Abstract:
A high voltage device having Schottky diode includes a semiconductor substrate, a Schottky diode formed on the semiconductor substrate, at least a first doped region having a first conductive type formed in the semiconductor substrate and under the Schottky diode, and a control gate positioned on the semiconductor substrate. The control gate covers a portion of the Schottky diode and the first doped region positioned on the semiconductor substrate.
Public/Granted literature
- US20150054116A1 HIGH VOLTAGE DEVICE HAVING SCHOTTKY DIODE Public/Granted day:2015-02-26
Information query
IPC分类:
