Invention Grant
- Patent Title: Triple cascode power amplifier
- Patent Title (中): 三重共源共栅功率放大器
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Application No.: US14158009Application Date: 2014-01-17
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Publication No.: US09214898B2Publication Date: 2015-12-15
- Inventor: Gen-Sheng Ran , Po-Chih Wang , Ka-Un Chan
- Applicant: Realtek Semiconductor Corp.
- Applicant Address: TW Hsinchu
- Assignee: REALTEK SEMICONDUCTOR CORP.
- Current Assignee: REALTEK SEMICONDUCTOR CORP.
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW102103624A 20130131
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F1/22 ; H03F3/45

Abstract:
A triple cascode power amplifier is provided. The triple cascode power amplifier includes a first-stage transistor pair, a second-stage transistor pair and a third-stage transistor pair. The first-stage transistor pair comprises two first-stage transistors that respectively receive two dynamic bias voltages with opposite polarities. The second-stage transistor pair is coupled with the first-stage transistor pair to form a first node and comprise two second-stage transistors coupled with each other to form a second node. The third-stage transistor pair is coupled with the second-stage transistor pair and comprises two third-stage transistors for outputting a differential signal. The first-stage transistor pair and the second-stage transistor pair are low voltage components while the third-stage transistor pair is a high voltage component. The power amplifier transforms the differential signal into a single-ended signal for output.
Public/Granted literature
- US20140210560A1 TRIPLE CASCODE POWER AMPLIFIER Public/Granted day:2014-07-31
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