A differential bit cell includes two memory elements that are configured to have different states. Each of the two memory elements is connected to a respective switching element. Each of these switching elements may have process variances, which may result in a degradation of read and/or write margins. To mitigate the effect of such variances, another switching element is coupled to the two memory elements and their respective switching elements in a manner that couples the aforementioned switching elements in a parallel fashion. In this way, the mismatch effects between the switching elements can be negated during read operations. During programming operations, such a configuration allows for the programming of both memory elements to different states with a single current pulse and also reduces the effective resistance of the programming path.