A method for manufacturing a semiconductor component that includes the use of multiple layers of photoresist. A first layer of electrically conductive material is formed over a substrate and a first layer of photoresist is formed over the first layer of electrically conductive material. A portion of the first layer of photoresist is removed leaving photoresist having sidewalls separated by a gap. A second layer of electrically conductive material having first and second sidewalls is formed in the gap. A second layer of photoresist is formed over the first layer of photoresist and over the second layer of electrically conductive material. Portions of the second layer of photoresist and the first layer of photoresist are removed to uncover the first and second edges of the second layer of electrically conductive material. A protective structure is formed over the first and second edges of the second electrically conductive material.