Invention Grant
- Patent Title: Inductor structure with magnetic material
- Patent Title (中): 具有磁性材料的电感结构
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Application No.: US14712329Application Date: 2015-05-14
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Publication No.: US09219109B2Publication Date: 2015-12-22
- Inventor: Yuan-Tai Tseng , Ming-Chyi Liu , Chung-Yen Chou , Chia-Shiung Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L49/02
Abstract:
The mechanisms for forming an inductor structure are provided. The inductor structure includes a substrate and a first dielectric layer formed over the substrate. The inductor structure also includes a first metal layer formed in the first dielectric layer and a magnetic layer formed over the first dielectric layer, and the magnetic layer has edges more than four in a cross section view.
Public/Granted literature
- US20150249121A1 INDUCTOR STRUCTURE WITH MAGNETIC MATERIAL AND METHOD FOR FORMING THE SAME Public/Granted day:2015-09-03
Information query
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