Invention Grant
- Patent Title: Vertical gallium nitride transistors and methods of fabricating the same
- Patent Title (中): 垂直氮化镓晶体管及其制造方法
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Application No.: US14177825Application Date: 2014-02-11
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Publication No.: US09219137B2Publication Date: 2015-12-22
- Inventor: Motonobu Takeya , Kwan Hyun Lee , June Sik Kwak , Young Do Jong , Kang Nyung Lee
- Applicant: Seoul Semiconductor Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Semiconductor Co., Ltd.
- Current Assignee: Seoul Semiconductor Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2013-0014873 20130212; KR10-2013-0070692 20130620; KR10-2013-0081623 20130711; KR10-2013-0087317 20130724
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/778 ; H01L29/32 ; H01L29/66 ; H01L21/683 ; H01L29/78 ; H01L29/06 ; H01L29/80 ; B82Y10/00 ; H01L29/34 ; H01L29/417 ; H01L29/04 ; H01L29/20 ; H01L29/423 ; H01L29/808 ; H01L29/12
Abstract:
A vertical gallium nitride transistor according to an exemplary embodiment of the present invention includes a semiconductor structure including a first semiconductor layer of a first conductivity-type having a first surface and sidewalls, a second semiconductor layer of the first conductivity-type surrounding the first surface and the sidewalls of the first semiconductor layer, and a third semiconductor layer of a second conductivity-type disposed between the first semiconductor layer and the second semiconductor layer, the third semiconductor layer separating the first and second semiconductor layers from each other.
Public/Granted literature
- US20140225122A1 VERTICAL GALLIUM NITRIDE TRANSISTORS AND METHODS OF FABRICATING THE SAME Public/Granted day:2014-08-14
Information query
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