Invention Grant
- Patent Title: Single photon source die and method of manufacturing the same
- Patent Title (中): 单光子源模及其制造方法
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Application No.: US14480868Application Date: 2014-09-09
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Publication No.: US09219190B2Publication Date: 2015-12-22
- Inventor: Ching-Hsueh Chiu , Ya-Wen Lin , Po-Min Tu , Shih-Cheng Huang
- Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Applicant Address: TW Hsinchu Hien
- Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Current Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Current Assignee Address: TW Hsinchu Hien
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201310410729 20130911
- Main IPC: H01L33/08
- IPC: H01L33/08 ; H01L33/00 ; H01L33/06 ; H01L33/18 ; H01L33/32 ; H01L33/20 ; H01L33/42
Abstract:
A single photon source die includes a first semiconductor layer, a plurality of columnar structures formed on the first semiconductor layer, a second semiconductor layer formed on the columnar structures. Each columnar structure includes a bottom layer, a single photon point layer and a connecting layer. The single photon point layer includes a plurality of single photon points.
Public/Granted literature
- US20150069323A1 SINGLE PHOTON SOURCE DIE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-03-12
Information query
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