Invention Grant
- Patent Title: Multi-bit ferroelectric memory device and methods of forming the same
- Patent Title (中): 多位铁电存储器件及其形成方法
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Application No.: US14068887Application Date: 2013-10-31
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Publication No.: US09219225B2Publication Date: 2015-12-22
- Inventor: Kamal M Karda , F Daniel Gealy , D. V. Nirmal Ramaswamy , Chandra V Mouli
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C11/22
- IPC: G11C11/22 ; H01L43/02 ; H01L43/12 ; G11C11/56 ; H01L27/115 ; H01L49/02
Abstract:
Multi-bit ferroelectric memory devices and methods of forming the same are provided. One example method of forming a multi-bit ferroelectric memory device can include forming a first ferroelectric material on a first side of a via, removing a material to expose a second side of the via, and forming second ferroelectric material on the second side of the via at a different thickness compared to the first side of the via.
Public/Granted literature
- US20150117084A1 MULTI-BIT FERROELECTRIC MEMORY DEVICE AND METHODS OF FORMING THE SAME Public/Granted day:2015-04-30
Information query
