Invention Grant
- Patent Title: Resistance change device and memory cell array
- Patent Title (中): 电阻变化器和存储单元阵列
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Application No.: US14550018Application Date: 2014-11-21
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Publication No.: US09219229B2Publication Date: 2015-12-22
- Inventor: Shosuke Fujii , Daisuke Matsushita , Yuichiro Mitani
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-073697 20100326
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24 ; G11C13/00
Abstract:
According to one embodiment, a resistance change device includes a first electrode including a metal, a second electrode, and an amorphous oxide layer including Si and O between the first and second electrode, the layer having a concentration gradient of O and a first peak thereof in a direction from the first electrode to the second electrode.
Public/Granted literature
- US20150102279A1 RESISTANCE CHANGE DEVICE AND MEMORY CELL ARRAY Public/Granted day:2015-04-16
Information query
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