Invention Grant
- Patent Title: Wideband bias circuits and methods
- Patent Title (中): 宽带偏置电路和方法
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Application No.: US14172150Application Date: 2014-02-04
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Publication No.: US09219447B2Publication Date: 2015-12-22
- Inventor: Jose Cabanillas , Calogero Davide Presti
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Fountainhead Law Group P.C.
- Main IPC: H03F1/22
- IPC: H03F1/22 ; H03F1/02 ; H03F3/193 ; H03F1/48

Abstract:
The present disclosure includes circuits and methods for wideband biasing. In one embodiment, an amplifiers includes a cascode transistor between an input and an output of the amplifier. The cascode transistor receives a bias from a bias circuit comprising a resistor between the power supply and a first node, a resistor between the first node and a reference voltage, and a capacitor between the power supply and the first node. The power supply may be a modulated power supply, which is coupled through the bias circuit to a capacitance at the control terminal of the cascode transistor. An inductor is configured between a terminal of the cascode transistor and the power supply. The inductor may isolate the output from the modulated supply signal.
Public/Granted literature
- US20150070095A1 WIDEBAND BIAS CIRCUITS AND METHODS Public/Granted day:2015-03-12
Information query
IPC分类: