Invention Grant
- Patent Title: Method for producing trench-like depressions in the surface of a wafer
- Patent Title (中): 在晶片表面生产沟槽状凹陷的方法
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Application No.: US13856637Application Date: 2013-04-04
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Publication No.: US09220852B2Publication Date: 2015-12-29
- Inventor: Klaus Kadel
- Applicant: Klaus Kadel
- Applicant Address: DE Dortmund
- Assignee: Boehringer Ingelheim Microparts GmbH
- Current Assignee: Boehringer Ingelheim Microparts GmbH
- Current Assignee Address: DE Dortmund
- Agent Michael P. Morris; Mary-Ellen M. Devlin
- Priority: EP12163650 20120410
- Main IPC: A61M11/02
- IPC: A61M11/02 ; B81C1/00
Abstract:
In a method of producing trench-like depressions in the surface of a wafer, particularly a silicon wafer, by plasma etching, in which the depressions are produced by alternate passivation and etching, each depression in its final geometry is provided with a protective layer of the polytetrafluoroethylene type.
Public/Granted literature
- US20130263847A1 METHOD FOR PRODUCING TRENCH-LIKE DEPRESSIONS IN THE SURFACE OF A WAFER Public/Granted day:2013-10-10
Information query
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