Invention Grant
US09224495B2 Nonvolatile memory device and method detecting defective word line
有权
非易失性存储器件和方法检测有缺陷的字线
- Patent Title: Nonvolatile memory device and method detecting defective word line
- Patent Title (中): 非易失性存储器件和方法检测有缺陷的字线
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Application No.: US14476151Application Date: 2014-09-03
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Publication No.: US09224495B2Publication Date: 2015-12-29
- Inventor: Bong-Kil Jung , Daeseok Byeon
- Applicant: Bong-Kil Jung , Daeseok Byeon
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2013-0131332 20131031
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C16/04
Abstract:
The inventive concept relates to a nonvolatile memory device and a method of detecting a defective word line. The method includes executing a defective word line detection operation using a program/erase voltage applied to a selected word line, wherein the defective word line detection operation determines whether or not the selected word line is defective in relation to respective word line voltage responses for the first and second segments during execution of the program/erase operation.
Public/Granted literature
- US20150117105A1 NONVOLATILE MEMORY DEVICE AND METHOD DETECTING DEFECTIVE WORD LINE Public/Granted day:2015-04-30
Information query
