Invention Grant
- Patent Title: Zinc oxide sintered compact tablet and manufacturing method thereof
- Patent Title (中): 氧化锌烧结片及其制造方法
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Application No.: US13699139Application Date: 2011-05-18
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Publication No.: US09224513B2Publication Date: 2015-12-29
- Inventor: Kentaro Sogabe
- Applicant: Kentaro Sogabe
- Applicant Address: JP Tokyo
- Assignee: SUMITOMO METAL MINING CO., LTD.
- Current Assignee: SUMITOMO METAL MINING CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Katten Muchin Rosenman LLP
- Priority: JP2010-117845 20100521
- International Application: PCT/JP2011/061461 WO 20110518
- International Announcement: WO2011/145665 WO 20111124
- Main IPC: H01B1/08
- IPC: H01B1/08 ; C04B35/453 ; C23C14/24 ; C04B35/626 ; C23C14/08 ; C01G9/02 ; B82Y30/00

Abstract:
Provided is a zinc oxide sintered compact tablet enabling a transparent conductive film having no pinholes defects to be stably obtained during vacuum deposition film formation by suppressing the occurrence of the splashing phenomenon. A zinc oxide sintered compact tablet having hexagonal crystal structure, wherein when the integrated intensity of surface (103) and surface (110) found through X-ray diffraction analysis using CuKα radiation is taken to be I(103) and I(110) respectively, the orientation of the uniaxially pressed surface that is expressed by I(103)/(I(103)+I(110)) is 0.48 or more is obtained by performing pressurized formation of a granulated powder composed of a zinc oxide powder or a powder mixture of zinc oxide and an added element as a dopant and having a percentage of donut shaped secondary particles of 50% or more, sintering at normal pressure and a temperature of 800° C. to 1300° C., and further performing reduction treatment by maintaining the normal pressure sintered compact in a vacuum at a pressure of 1×10−3 Pa or more and at a temperature of 800° C. to 1300° C. for no less than 1 minute and no longer than 10 minutes.
Public/Granted literature
- US20130200314A1 ZINC OXIDE SINTERED COMPACT TABLET AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-08-08
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