Invention Grant
US09224581B2 Parallel plate reactor for uniform thin film deposition with reduced tool foot-print
有权
平行板反应器，用于均匀薄膜沉积，减少了工具脚印
- Patent Title: Parallel plate reactor for uniform thin film deposition with reduced tool foot-print
- Patent Title (中): 平行板反应器，用于均匀薄膜沉积，减少了工具脚印
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Application No.: US13577701Application Date: 2010-07-09
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Publication No.: US09224581B2Publication Date: 2015-12-29
- Inventor: Joachim Mai , Benjamin Strahm , Guillaume Wahli , Arthur Buechel , Thomas Schulze
- Applicant: Joachim Mai , Benjamin Strahm , Guillaume Wahli , Arthur Buechel , Thomas Schulze
- Applicant Address: DE Hohenstein-Ernstthal
- Assignee: Roth & Rau AG
- Current Assignee: Roth & Rau AG
- Current Assignee Address: DE Hohenstein-Ernstthal
- Agent Laurence A. Greenberg; Werner H. Stemer; Ralph E. Locher
- Priority: EP10401018 20100208
- International Application: PCT/IB2010/053138 WO 20100709
- International Announcement: WO2011/095846 WO 20110811
- Main IPC: H01J37/32
- IPC: H01J37/32 ; C23C16/455 ; C23C16/509
Abstract:
A capacitive-coupled parallel plate plasma enhanced chemical vapor deposition reactor includes a gas distribution unit that is integrated in an RF electrode and is formed with a gas outlet. The parallel plate reactor is configured so that layers with high thickness homogeneity and quality can be produced. The capacitively coupled parallel plate plasma enhanced vapor deposition reactor has gas distribution unit with a multiple-stage showerhead constructed in such a way that it provides an independent adjustment of gas distribution and gas emission profile of the gas distribution unit.
Public/Granted literature
- US20120304933A1 PARALLEL PLATE REACTOR FOR UNIFORM THIN FILM DEPOSITION WITH REDUCED TOOL FOOT-PRINT Public/Granted day:2012-12-06
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