Invention Grant
- Patent Title: Integrated circuits having improved high-K dielectric layers and methods for fabrication of same
- Patent Title (中): 具有改进的高K电介质层的集成电路及其制造方法
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Application No.: US13931205Application Date: 2013-06-28
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Publication No.: US09224610B2Publication Date: 2015-12-29
- Inventor: Hoon Kim , Kisik Choi
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/28 ; H01L29/51 ; H01L21/02 ; H01L29/66
Abstract:
Integrated circuits and methods for fabricating integrated circuits are provided. In accordance with an exemplary embodiment, a method for fabricating an integrated circuit includes exposing a portion of a surface of a semiconductor substrate between a first spacer and a second spacer. The method further includes selectively forming a dielectric layer on the portion of the surface. A metal gate is formed over the dielectric layer and between the first spacer and the second spacer. The metal gate contacts the first spacer and the second spacer.
Public/Granted literature
- US20150001643A1 INTEGRATED CIRCUITS HAVING IMPROVED HIGH-K DIELECTRIC LAYERS AND METHODS FOR FABRICATION OF SAME Public/Granted day:2015-01-01
Information query
IPC分类:
