Invention Grant
- Patent Title: Bi-level dry etching scheme for transistor contacts
- Patent Title (中): 晶体管触点的双层干蚀刻方案
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Application No.: US14468893Application Date: 2014-08-26
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Publication No.: US09224637B1Publication Date: 2015-12-29
- Inventor: Masato Noguchi , Keita Kumamoto
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/311
Abstract:
Contact holes of different depths for source, drain, and gate connections are formed by common etch steps using a relatively low etch rate material over the gate electrode and a relatively high etch rate material over the source and drain terminals to provide similar etch times for all three holes so that risk of over-etching is reduced.
Information query
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