Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14096172Application Date: 2013-12-04
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Publication No.: US09224663B2Publication Date: 2015-12-29
- Inventor: Takuya Kadoguchi
- Applicant: Takuya Kadoguchi
- Applicant Address: JP Toyota-shi, Aichi-ken
- Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee Address: JP Toyota-shi, Aichi-ken
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Priority: JP2012-269822 20121210
- Main IPC: H01L23/051
- IPC: H01L23/051 ; H01L23/31 ; H01L23/36

Abstract:
A semiconductor device includes a semiconductor element in the form of a flat plate that has opposed first and second surfaces, an insulating layer that covers control wiring located on the first surface side of the semiconductor element, a metal block that is bonded to the first surface side of the semiconductor element via a solder layer, and a protective film that is formed between the metal block and the insulating layer, the protective film having a hardness equal to or greater than a hardness of the metal block. When viewed from the first surface side, the protective film is formed in an area at least including a position where an edge portion of the metal block and the control wiring cross each other.
Public/Granted literature
- US20140159230A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-06-12
Information query
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