Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13857195Application Date: 2013-04-05
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Publication No.: US09224667B2Publication Date: 2015-12-29
- Inventor: Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2002-316397 20021030
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L23/29 ; H01L27/12 ; H01L29/786 ; H01L51/00 ; H01L29/66

Abstract:
It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.
Public/Granted literature
- US20130214434A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-08-22
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