Invention Grant
US09224668B2 Semiconductor HEMT device with stoichiometric silicon nitride layer
有权
具有化学计量氮化硅层的半导体HEMT器件
- Patent Title: Semiconductor HEMT device with stoichiometric silicon nitride layer
- Patent Title (中): 具有化学计量氮化硅层的半导体HEMT器件
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Application No.: US14095038Application Date: 2013-12-03
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Publication No.: US09224668B2Publication Date: 2015-12-29
- Inventor: Kozo Makiyama
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2013-006459 20130117
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L23/29 ; H01L23/31 ; H01L29/423 ; H01L29/778 ; H01L29/20
Abstract:
A semiconductor device includes: a compound semiconductor stack structure including a plurality of compound semiconductor layers stacked over a semiconductor substrate; and a first insulating film covering the surface of the compound semiconductor stack structure, the first insulating film being a silicon nitride film including, on the top side, a first region containing nitrogen element in excess of the stoichiometric ratio.
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