Invention Grant
US09224692B2 Semiconductor device having a nanotube layer and method for forming
有权
具有纳米管层的半导体器件及其形成方法
- Patent Title: Semiconductor device having a nanotube layer and method for forming
- Patent Title (中): 具有纳米管层的半导体器件及其形成方法
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Application No.: US14513980Application Date: 2014-10-14
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Publication No.: US09224692B2Publication Date: 2015-12-29
- Inventor: Douglas M. Reber
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/768
Abstract:
A method of forming a semiconductor device includes forming a first conductive layer over the substrate. A dielectric layer, having a first opening, is formed over the first conductive layer. A seed layer is deposited over the first dielectric layer and in the first opening. A layer is formed of conductive nanotubes from the seed layer over the first dielectric layer and over the first opening. A second dielectric is formed over the layer of conductive nanotubes. An opening is formed in the second dielectric layer over the first opening. Conductive material is deposited in the second opening.
Public/Granted literature
- US20150206843A1 SEMICONDUCTOR DEVICE HAVING A NANOTUBE LAYER AND METHOD FOR FORMING Public/Granted day:2015-07-23
Information query
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