Invention Grant
US09224711B2 Method for manufacturing a semiconductor device having multiple heat sinks
有权
制造具有多个散热片的半导体器件的方法
- Patent Title: Method for manufacturing a semiconductor device having multiple heat sinks
- Patent Title (中): 制造具有多个散热片的半导体器件的方法
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Application No.: US14133859Application Date: 2013-12-19
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Publication No.: US09224711B2Publication Date: 2015-12-29
- Inventor: Takeshi Imamura , Nobutaka Shimizu , Yasunori Fujimoto
- Applicant: FUJITSU SEMICONDUCTOR LIMITED
- Applicant Address: JP Yokohama
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2013-004465 20130115
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/36 ; H01L23/367 ; H01L23/00 ; H01L23/373 ; H01L23/42 ; H01L21/56 ; H01L25/16 ; H01L25/18
Abstract:
A method for manufacturing a semiconductor device is provided, the method including: mounting a first element on a wiring substrate, placing a first heat sink on the first element with a metal material interposed between the first heat sink and the first element, attaching the first heat sink to the first element via the metal material by heating and melting the metal material, and mounting a second element on the wiring substrate after the steps of attaching the first heat sink to the first element.
Public/Granted literature
- US20140197533A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2014-07-17
Information query
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