Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14221838Application Date: 2014-03-21
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Publication No.: US09224713B2Publication Date: 2015-12-29
- Inventor: Satoshi Tsukiyama , Masatoshi Fukuda , Hiroshi Watabe , Keita Mizoguchi , Naoyuki Komuta
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-117906 20110526
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L23/00 ; H01L23/498 ; H01L21/50 ; H01L25/065 ; H01L25/00 ; H01L23/31

Abstract:
In one embodiment, a semiconductor device includes a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip. The first and second semiconductor chips are electrically connected via first bump connection parts. Stopper projections and bonding projections are provided at least one of the first and second semiconductor chips. The stopper projections are in contact with the other of the first and second semiconductor chips in an unbonded state. The bonding projections are bonded to the first and second semiconductor chips.
Public/Granted literature
- US20140206144A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-07-24
Information query
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