Invention Grant
US09224714B2 Semiconductor device having a through-substrate via 有权
具有贯通基板通孔的半导体装置

Semiconductor device having a through-substrate via
Abstract:
Semiconductor devices are described that include a via that extends only partially through the substrate. Through-substrate vias (TSV) furnish electrical interconnectivity to electronic components formed in the substrates. In implementations, the semiconductor devices are fabricated by first bonding a semiconductor wafer to a carrier wafer with an adhesive material. The semiconductor wafer includes an etch stop disposed within the wafer (e.g., between a first surface a second surface of the wafer). One or more vias are formed through the wafer. The vias extend from the second surface to the etch stop.
Public/Granted literature
Information query
Patent Agency Ranking
0/0