Invention Grant
- Patent Title: Light emitting semiconductor
- Patent Title (中): 发光半导体
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Application No.: US14503978Application Date: 2014-10-01
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Publication No.: US09224719B2Publication Date: 2015-12-29
- Inventor: Li-Fan Lin , Ching-Chuan Shiue , Wen-Chia Liao , Shih-Peng Chen
- Applicant: DELTA ELECTRONICS, INC.
- Applicant Address: TW
- Assignee: DELTA ELECTRONICS, INC.
- Current Assignee: DELTA ELECTRONICS, INC.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Priority: TW10118299A 20120523
- Main IPC: H01L25/075
- IPC: H01L25/075 ; H01L33/54 ; H01L33/62 ; H01L33/50

Abstract:
A light emitting semiconductor element includes at least two electrically conductive units, at least a light emitting semiconductor die and a light transmitting layer. A groove is located between the two electrically conductive units. The light emitting semiconductor die is cross over the electrically conductive units. The light transmitting layer covers the light emitting semiconductor and partially fills within the groove for linking the electrically conductive units.
Public/Granted literature
- US20150014714A1 LIGHT EMITTING SEMICONDUCTOR Public/Granted day:2015-01-15
Information query
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