Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14307097Application Date: 2014-06-17
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Publication No.: US09224729B2Publication Date: 2015-12-29
- Inventor: Dai Kanai , Taiji Ema , Kazushi Fujita
- Applicant: FUJITSU SEMICONDUCTOR LIMITED
- Applicant Address: JP Yokohama
- Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2013-150673 20130719
- Main IPC: H01L27/06
- IPC: H01L27/06
Abstract:
A semiconductor device includes: a first well provided in a semiconductor substrate; a second well provided in the semiconductor substrate, so as to be isolated from the first well; a Schottky barrier diode formed in the first well; and a PN junction diode formed in the second well, with an impurity concentration of the PN junction thereof set higher than an impurity concentration of the Schottky junction of the Schottky barrier diode, and being connected antiparallel with the Schottky barrier diode.
Public/Granted literature
- US20150021732A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-01-22
Information query
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