Invention Grant
- Patent Title: Vertical NAND device with shared word line steps
- Patent Title (中): 具有共享字线步骤的垂直NAND器件
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Application No.: US14320865Application Date: 2014-07-01
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Publication No.: US09224747B2Publication Date: 2015-12-29
- Inventor: Yuki Mizutani , Fumiaki Toyama
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES INC.
- Current Assignee: SANDISK TECHNOLOGIES INC.
- Current Assignee Address: US TX Plano
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L27/115
Abstract:
A memory device includes a memory cell array having a first side and a second side and a stepped word line contact region located between the first side and the second side of the memory array. A first word line stair pattern is located in the stepped word line contact region adjacent to the first side of the memory array and a second word line stair pattern located in the stepped word line contact region adjacent to the second side of the memory array. A peripheral device region located in the stepped word line contact region between the first and the second word line stair patterns.
Public/Granted literature
- US20150279852A1 VERTICAL NAND DEVICE WITH SHARED WORD LINE STEPS Public/Granted day:2015-10-01
Information query
IPC分类:
