Invention Grant
- Patent Title: Fabricating method of array structure
- Patent Title (中): 阵列结构的制作方法
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Application No.: US14494570Application Date: 2014-09-23
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Publication No.: US09224765B2Publication Date: 2015-12-29
- Inventor: Yu-Cheng Chen , Chih-Hung Lin , Yi-Hui Li
- Applicant: Au Optronics Corporation
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW98133259A 20090930
- Main IPC: H01L27/12
- IPC: H01L27/12 ; G02F1/1339 ; G02F1/1345 ; G02F1/1368 ; G02F1/1362
Abstract:
An array structure, which includes a TFT, a passivation layer, a pixel electrode, a first connecting layer and a first spacer is provided. The TFT includes a gate, a source and a drain. The passivation layer overlays the TFT. The pixel electrode is located on the passivation layer. The first connecting layer is located on the pixel electrode and electrically connected to the pixel electrode and the drain. The first spacer is located on the first connecting layer.
Public/Granted literature
- US20150011054A1 FABRICATING METHOD OF ARRAY STRUCTURE Public/Granted day:2015-01-08
Information query
IPC分类:
