Invention Grant
- Patent Title: Structure of dielectric grid for a semiconductor device
- Patent Title (中): 半导体器件介质栅格的结构
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Application No.: US14088957Application Date: 2013-11-25
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Publication No.: US09224781B2Publication Date: 2015-12-29
- Inventor: Chun-Hao Chou , Yin-Chieh Huang , Kuo-Cheng Lee , Chi-Cherng Jeng , Hsin-Chi Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L27/146

Abstract:
An image sensor device and a method for manufacturing the image sensor device are provided. An image sensor device includes a pixel region and a non-pixel region in a substrate. In the pixel region there is a plurality of sensor elements. The non-pixel region is adjacent to the pixel region and has no sensor element. Dielectric grids are disposed in the pixel region with a first dielectric trench between two adjacent dielectric grids. The first dielectric trench aligns to a respective sensor element. Second dielectric trenches are disposed in the non-pixel region.
Public/Granted literature
- US20150145083A1 Structure Of Dielectric Grid For A Semiconductor Device Public/Granted day:2015-05-28
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