This thin film transistor substrate is provided with: a drain electrode that is formed on an insulating film, and comprises copper; an interlayer insulating film formed on the drain electrode; and a pixel electrode that is formed in the contact hole, which is formed in the insulating film and the interlayer insulating film, and on the interlayer insulating film, and is electrically connected to the drain electrode via the contact hole. In a plan view of the contact hole, the drain electrode is formed inside part of the contact hole in such a manner that part of the drain electrode and part of the outer periphery of the contact hole are overlapping, and part of the pixel electrode and the drain electrode are electrically connected.