Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14030765Application Date: 2013-09-18
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Publication No.: US09224825B2Publication Date: 2015-12-29
- Inventor: Yuki Nakano , Ryota Nakamura , Katsuhisa Nagao
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2009-170154 20090721; JP2009-233777 20091007; JP2010-152085 20100702
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/423 ; H01L21/04 ; H01L29/66 ; H01L29/786 ; H01L29/49 ; H01L29/78 ; H01L29/04 ; H01L29/16
Abstract:
The semiconductor device of the present invention includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film.
Public/Granted literature
- US20140014972A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-01-16
Information query
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