Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing the same
- Patent Title (中): 半导体结构及其制造方法
-
Application No.: US13674146Application Date: 2012-11-12
-
Publication No.: US09224857B2Publication Date: 2015-12-29
- Inventor: Wei-Lin Chen , Chih-Chien Chang , Ke-Feng Lin , Chiu-Te Lee , Chih-Chung Wang , Chiu-Ling Lee
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: unknown Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: unknown Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L29/417 ; H01L29/08
Abstract:
A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug penetrating into the isolation and reaching the bottom thereof; and a first doping electrode region having the second conductive type, formed within the second well and below the isolation to connect the conductive plug.
Public/Granted literature
- US20140131797A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-05-15
Information query
IPC分类:
