Invention Grant
- Patent Title: Semiconductor device with notched gate
- Patent Title (中): 带切口的半导体器件
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Application No.: US13890402Application Date: 2013-05-09
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Publication No.: US09224861B2Publication Date: 2015-12-29
- Inventor: Hongning Yang , Pete Rodriguez , Zhihong Zhong , Jiang-Kai Zuo
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Agent Jonathan N. Geld
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
A semiconductor device includes a semiconductor substrate, a body region disposed in the semiconductor substrate and having a first conductivity type, a source region disposed in the semiconductor substrate adjacent the body region and having a second conductivity type, a drain region disposed in the semiconductor substrate, having the second conductivity type, and spaced from the source region to define a conduction path, a gate structure supported by the semiconductor substrate, configured to control formation of a channel in the conduction path during operation, and having a side adjacent the source region that comprises a notch, the notch defining a notch area, and a notch region disposed in the semiconductor substrate in the notch area and having the first conductivity type.
Public/Granted literature
- US20140332901A1 SEMICONDUCTOR DEVICE WITH NOTCHED GATE Public/Granted day:2014-11-13
Information query
IPC分类:
