Invention Grant
- Patent Title: Resistive memory devices
- Patent Title (中): 电阻式存储器件
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Application No.: US13599865Application Date: 2012-08-30
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Publication No.: US09224945B2Publication Date: 2015-12-29
- Inventor: Durai Vishak Nirmal Ramaswamy , Lei Bi , Beth R. Cook , Dale W. Collins
- Applicant: Durai Vishak Nirmal Ramaswamy , Lei Bi , Beth R. Cook , Dale W. Collins
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; G11C13/00 ; H01L27/24
Abstract:
Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed.
Public/Granted literature
- US20140061568A1 RESISTIVE MEMORY DEVICES Public/Granted day:2014-03-06
Information query
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