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US09225313B2 Bulk acoustic wave resonator having doped piezoelectric layer with improved piezoelectric characteristics 有权
具有具有改进的压电特性的掺杂压电层的体声波谐振器

Bulk acoustic wave resonator having doped piezoelectric layer with improved piezoelectric characteristics
Abstract:
A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with one of erbium or yttrium at an atomic percentage of greater than three for improving piezoelectric properties of the piezoelectric layer.
Abstract(Chinese):

体声波（BAW）谐振器结构包括设置在衬底上的第一电极，设置在第一电极上的压电层和设置在第一压电层上的第二电极。 压电层由掺杂有铒或钇中的一种的原子百分比大于3的压电材料形成，以改善压电层的压电性能。

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