Invention Grant
US09228091B2 Ferrite thin film-forming composition material, method of forming ferrite thin film, and ferrite thin film formed using the same
有权
铁氧体薄膜形成用组合物材料，铁氧体薄膜的形成方法和使用其形成的铁氧体薄膜
- Patent Title: Ferrite thin film-forming composition material, method of forming ferrite thin film, and ferrite thin film formed using the same
- Patent Title (中): 铁氧体薄膜形成用组合物材料，铁氧体薄膜的形成方法和使用其形成的铁氧体薄膜
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Application No.: US13830057Application Date: 2013-03-14
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Publication No.: US09228091B2Publication Date: 2016-01-05
- Inventor: Toshihiro Doi , Hideaki Sakurai , Kenzo Nakamura , Kazunori Igarashi , Nobuyuki Soyama
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Agent James E. Armstrong, IV; Nicholas J. DiCeglie, Jr.
- Priority: JP2012-076981 20120329
- Main IPC: C09D1/00
- IPC: C09D1/00 ; H01L21/316 ; C09D5/23 ; H01F41/22 ; C23C18/12 ; H01F10/20 ; H01F41/24
Abstract:
To provide a ferrite thin film-forming composition material that is a composition material for forming a ferrite thin film by using the sol-gel method which can form a thin ferrite thin film having a uniform thickness and, furthermore, has excellent long-term storage stability, a method of forming a ferrite thin film using the above composition material, and a ferrite thin film formed by using the above method. A ferrite thin film-forming composition material is a composition material for forming a NiZn ferrite, CuZn ferrite, or NiCuZn ferrite thin film by using a sol-gel method, in which the composition material is formed by dissolving metallic raw materials in a solvent including acetonitrile, and the fraction of acetonitrile is 30 mass % to 60 mass % with respect to 100 mass % of the composition material.
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