Invention Grant
- Patent Title: Ferromagnetic material sputtering target
- Patent Title (中): 铁磁材料溅射靶
-
Application No.: US13383886Application Date: 2010-09-30
-
Publication No.: US09228251B2Publication Date: 2016-01-05
- Inventor: Atsushi Sato , Atsutoshi Arakawa
- Applicant: Atsushi Sato , Atsutoshi Arakawa
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2010-011326 20100121
- International Application: PCT/JP2010/067160 WO 20100930
- International Announcement: WO2011/089760 WO 20110728
- Main IPC: C23C14/34
- IPC: C23C14/34 ; B22F3/10 ; C22C19/07 ; C22C1/04 ; H01F41/18

Abstract:
A ferromagnetic material sputtering target made of metal having a composition containing 20 mol % or less of Cr, and Co as the remainder thereof, wherein the structure of the target includes a metallic substrate (A), and, in the metallic substrate (A), a spherical phase (B) containing 90 wt % or more of Co in which the difference between the longest diameter and the shortest diameter is 0 to 50%. Provided is a ferromagnetic material sputtering target capable of improving the leakage magnetic flux to obtain a stable electrical discharge with a magnetron sputtering device.
Public/Granted literature
- US20120118734A1 Ferromagnetic Material Sputtering Target Public/Granted day:2012-05-17
Information query
IPC分类: