Invention Grant
- Patent Title: FePt-C-based sputtering target and process for producing the same
- Patent Title (中): FePt-C系溅射靶及其制造方法
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Application No.: US14311934Application Date: 2014-06-23
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Publication No.: US09228255B2Publication Date: 2016-01-05
- Inventor: Takanobu Miyashita , Yasuyuki Goto , Ryousuke Kushibiki , Masahiro Aono , Masahiro Nishiura
- Applicant: TANAKA KIKINZOKU KOGYO K.K.
- Applicant Address: JP Tokyo
- Assignee: TANAKA KIKINZOKU KOGYO K.K.
- Current Assignee: TANAKA KIKINZOKU KOGYO K.K.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2011-076829 20110330; JP2012-005696 20120113
- Main IPC: B22F3/12
- IPC: B22F3/12 ; C23C14/34 ; C22C5/04 ; C22C1/04 ; C22C33/02
Abstract:
An FePt—C-based sputtering target contains Fe, Pt, and C and has a structure in which an FePt-based alloy phase and a C phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities. The content of C is 21 at % or more and 70 at % or less based on the total amount of the target.
Public/Granted literature
- US20140301887A1 FEPT-C-BASED SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME Public/Granted day:2014-10-09
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