Invention Grant
- Patent Title: Defect inspecting method and defect inspecting apparatus
- Patent Title (中): 缺陷检查方法和缺陷检查装置
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Application No.: US14154612Application Date: 2014-01-14
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Publication No.: US09228960B2Publication Date: 2016-01-05
- Inventor: Toshiyuki Nakao , Shigenobu Maruyama , Akira Hamamatsu , Yuta Urano
- Applicant: Hitachi High-Technologies Corporation
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Baker Botts L.L.P.
- Priority: JP2009-045857 20090227
- Main IPC: G01N21/00
- IPC: G01N21/00 ; G01N21/95 ; G01N21/88 ; H01L21/66

Abstract:
A defect inspecting method and apparatus for inspecting a surface state including a defect on a wafer surface, in which a polarization state of a laser beam irradiated onto the wafer surface is connected into a specified polarization state, the converted laser beam having the specified polarization state is inserted onto the wafer surface, and a scattering light occurring from an irradiated region where the laser beam having the specified polarization state is irradiated, is separated into a first scattering light occurring due to a defect on the wafer and a second scattering light occurring due to a surface roughness on the wafer. An optical element for optical path division separates the first and second scattering lights approximately at the same time.
Public/Granted literature
- US20140125980A1 Defect Inspecting Method and Defect Inspecting Apparatus Public/Granted day:2014-05-08
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