Invention Grant
- Patent Title: Memory test system and method
- Patent Title (中): 内存测试系统和方法
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Application No.: US14099318Application Date: 2013-12-06
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Publication No.: US09229059B2Publication Date: 2016-01-05
- Inventor: Min-Chung Chou
- Applicant: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
- Applicant Address: TW Hsinchu
- Assignee: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
- Current Assignee: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
- Current Assignee Address: TW Hsinchu
- Agency: Li & Cai Intellectual Property (USA) Office
- Main IPC: G01R31/319
- IPC: G01R31/319 ; G11C29/48 ; G11C29/26 ; G11C29/00 ; G11C29/56 ; G11C29/12 ; G11C29/40 ; G11C29/10 ; G11C29/36

Abstract:
An exemplary embodiment of the present disclosure illustrates a memory test system comprising a memory device, a probe card, and a tester. The memory device comprises a memory die with a plurality of memory banks, a plurality of input circuits, and a plurality of output circuits, wherein each of the input circuits has a first input pin and a second pin, the first input pins of the input circuits are used to read a plurality of patches of data stored in memory cells of the memory banks, and the second input pins are used to receive a compressed result. The output circuits receive compressed signals output from the input circuits, and the probe card mixes the compressed output signals output from the output circuits to output a mixed compressed output signal to the tester.
Public/Granted literature
- US20150162096A1 MEMORY TEST SYSTEM AND METHOD Public/Granted day:2015-06-11
Information query
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