Invention Grant
- Patent Title: Systems and methods for high-throughput and small-footprint scanning exposure for lithography
- Patent Title (中): 用于光刻的高通量和小尺寸扫描曝光的系统和方法
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Application No.: US14030490Application Date: 2013-09-18
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Publication No.: US09229332B2Publication Date: 2016-01-05
- Inventor: Burn Jeng Lin , Shy-Jay Lin , Jaw-Jung Shin , Wen-Chuan Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03B27/32
- IPC: G03B27/32 ; G03B27/44 ; G03B27/54 ; H02K41/02 ; G03F7/20

Abstract:
The present disclosure provides a lithography system comprising a radiation source and an exposure tool including a plurality of exposure columns densely packed in a first direction. Each exposure column includes an exposure area configured to pass the radiation source. The system also includes a wafer carrier configured to secure and move one or more wafers along a second direction that is perpendicular to the first direction, so that the one or more wafers are exposed by the exposure tool to form patterns along the second direction. The one or more wafers are covered with resist layer and aligned in the second direction on the wafer carrier.
Public/Granted literature
- US20150077731A1 SYSTEMS AND METHODS FOR HIGH-THROUGHPUT AND SMALL-FOOTPRINT SCANNING EXPOSURE FOR LITHOGRAPHY Public/Granted day:2015-03-19
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