Invention Grant
US09229804B2 Mitigating inter-cell coupling effects in non volatile memory (NVM) cells
有权
缓解非易失性存储器(NVM)单元中的单元间耦合效应
- Patent Title: Mitigating inter-cell coupling effects in non volatile memory (NVM) cells
- Patent Title (中): 缓解非易失性存储器(NVM)单元中的单元间耦合效应
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Application No.: US13813431Application Date: 2011-08-16
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Publication No.: US09229804B2Publication Date: 2016-01-05
- Inventor: Yitzhak Birk , Amit Berman
- Applicant: Yitzhak Birk , Amit Berman
- Applicant Address: IL Haifa
- Assignee: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
- Current Assignee: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
- Current Assignee Address: IL Haifa
- Agency: Reches Patents
- International Application: PCT/IB2011/053618 WO 20110816
- International Announcement: WO2012/023102 WO 20120223
- Main IPC: G06F11/00
- IPC: G06F11/00 ; H03M13/00 ; G06F11/10 ; G11C7/02 ; G11C7/10 ; G11C16/34

Abstract:
A system, computer readable medium and a method of operating a non volatile memory (NVM) array that comprises multiple NVM cells, the method comprises: receiving input data to be written to the non volatile memory; performing constraint coding on the input data to provide encoded data; wherein the constraint coding prevents the encoded data from comprising forbidden combinations of values; wherein the forbidden combinations of values are defined based on expected inter-cell coupling induced errors resulting from coupling between NVM cells; and writing the encoded data to the non volatile memory.
Public/Granted literature
- US20130238959A1 MITIGATING INTER-CELL COUPLING EFFECTS IN NON VOLATILE MEMORY (NVM) CELLS Public/Granted day:2013-09-12
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