A data storage device includes a non-volatile memory and a controller. A method includes initiating a write operation to write first data to a first word line of a multi-level cell (MLC) block of the non-volatile memory. The method further includes compensating, in response to an event that interrupts programming at the first word line, for incompletion of a write disturb effect at the MLC block due to the event by copying second data from a second word line of the MLC block to a second block of the non-volatile memory or by writing dummy data to the second word line.