Invention Grant
US09229851B2 Memory controller, semiconductor memory device and control method thereof
有权
存储器控制器，半导体存储器件及其控制方法
- Patent Title: Memory controller, semiconductor memory device and control method thereof
- Patent Title (中): 存储器控制器，半导体存储器件及其控制方法
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Application No.: US12551898Application Date: 2009-09-01
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Publication No.: US09229851B2Publication Date: 2016-01-05
- Inventor: Hiroshi Sukegawa , Hidetaka Tsuji , Shuji Takano
- Applicant: Hiroshi Sukegawa , Hidetaka Tsuji , Shuji Takano
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-041203 20090224
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/00 ; G06F13/28 ; G06F12/02 ; G11C16/34
Abstract:
A memory controller includes logical-physical address conversion table, an access number storing section configured to store the number of accesses to read out data from a memory cell in association with a logical address, a storage state checking section configured to check a storage state of data stored in the memory cell at every predetermined number of accesses, and a refresh processing section configured to perform refresh processing to restore the data stored in the memory cell if the storage state of the data is in a predetermined degraded state.
Public/Granted literature
- US20100217919A1 MEMORY CONTROLLER, SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD THEREOF Public/Granted day:2010-08-26
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