Invention Grant
- Patent Title: Optimized configurable NAND parameters
- Patent Title (中): 优化的可配置NAND参数
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Application No.: US14452749Application Date: 2014-08-06
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Publication No.: US09229856B2Publication Date: 2016-01-05
- Inventor: Chris Avila , Yingda Dong , Man Mui
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G06F12/02 ; G11C11/412 ; G11C11/56 ; G11C16/06 ; G11C29/02 ; G11C5/06 ; G11C7/24 ; H01L45/00 ; G11C29/50 ; G11C8/10

Abstract:
Configurable parameters may be used to access NAND flash memory according to schemes that optimize such parameters according to predicted characteristics of memory cells, for example, as a function of certain memory cell device geometry, which may be predicted based on the location of a particular device within a memory array.
Public/Granted literature
- US20140351496A1 Optimized Configurable NAND Parameters Public/Granted day:2014-11-27
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